| PART |
Description |
Maker |
| WED9LC6816V |
256Kx32 SSRAM/4Mx32 SDRAM Array(256Kx32同步静态RAMB>4Mx32同步动态RAM阵列)
|
White Electronic Designs Corporation
|
| WF128K32 WF128K32-50G4TI5 WF128K32-50G4TC5 WF128K3 |
128Kx32 5V Flash Module(128Kx32,5V闪速存储器模块)
x32 Flash EEPROM Module X32号，闪存EEPROM模块
128Kx32 5V Flash Module(128Kx32,5V???瀛???ㄦā??
|
White Electronic Designs Corporation
ITT, Corp.
|
| HY5DS283222BF HY5DS283222BF-28 HY5DS283222BF-33 HY |
GDDR SDRAM - 128Mb
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| AS5SS256K18DQ-10/IT AS5SS256K18DQ-10/XT AS5SS256K1 |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
256K x 18 SSRAM Synchronous Burst SRAM. Flow-Through 256 × 18的SSRAM同步突发静态存储器。流通过
|
Austin Semiconductor, Inc
|
| K4S283232E K4S283232E-TC1L K4S283232E-TC60 |
4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
4Mx32 SDRAM
|
SAMSUNG
|
| WED7F324XDNSN12C WED7F324XDNSN WED7F2324XDNSN12C |
4Mx32 / 2x4Mx32 INTEL J3 BASED, FLASH MODULE
|
WEDC[White Electronic Designs Corporation]
|
| AS5SS256K36ADQ-8.5/883C AS5SS256K36DQ-8.5/883C AS5 |
256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM
|
Austin Semiconductor
|
| AS5SS256K18DQ-10_IT AS5SS256K18DQ-10_XT AS5SS256K1 |
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
|
Austin Semiconductor
|
| WSF128K32-29H2C WSF128K32-27H2CA WSF128K32-27H2M W |
128KX32 SRAM/FLASH MODULE
|
WEDC[White Electronic Designs Corporation]
|
| WSF128K32-27H2M WSF128K32-27H2MA WSF128K32-27H2C |
128KX32 SRAM/FLASH MODULE
|
White Electronic Design...
|
| HMD4M32M2EG-5 HMD4M32M2EG-6 |
16Mbyte(4Mx32) 72-pin SIMM EDO Mode, 4K Refresh, 5V
|
Hanbit Electronics Co.,Ltd.
|
| HMD4M32M2VE HMD4M32M2VEG-5 HMD4M32M2VEG-6 |
16Mbyte(4Mx32) DRAM SIMM EDO MODE, 4K Refresh, 3.3V
|
Hanbit Electronics Co.,Ltd.
|
